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首页> 外文期刊>Superconductor Science & Technology >Reason for high critical current in thin YBCO films prepared by laser ablation from nanostructured target
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Reason for high critical current in thin YBCO films prepared by laser ablation from nanostructured target

机译:激光烧蚀纳米结构靶材制备YBCO薄膜的临界电流高的原因

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摘要

Thin YBCO films prepared by laser ablation froma nanocrystalline target have a high critical current density J_c?10~7 A cm~(-2) at 77K. To clarify the reason for the highvalue of J_c, the composition and structure of these films arecompared with those deposited from a typical coarse-grainedtarget. According to energy-dispersive x-ray and photoelectronspectroscopic analysis the contents of Y, Ba and Cu are similarin the films of both origins, despite some differences in thecompositions of the targets. It is concluded that the high value ofJ_c in the films prepared from the nanocrystalline target can beexplained by pinning of magnetic flux vortices to extended structural defects.
机译:通过激光烧蚀从纳米晶靶材制备的YBCO薄膜在77K时具有很高的临界电流密度J_c≥10〜7 A cm〜(-2)。为了阐明J_c值较高的原因,将这些膜的组成和结构与从典型的粗颗粒靶沉积的膜进行了比较。根据能量色散X射线和光电子能谱分析,尽管靶材的成分有所不同,但两种来源的薄膜中Y,Ba和Cu的含量相似。结论是,可以通过将磁通量涡旋钉扎到扩展的结构缺陷来解释由纳米晶体靶材制备的薄膜中J_c的高值。

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