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首页> 外文期刊>Optoelectronics, Instrumentation and Data Processing >Electron Microscopic Studies of CuS Nanocrystals Formed in Langmuir-Blodgett Films
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Electron Microscopic Studies of CuS Nanocrystals Formed in Langmuir-Blodgett Films

机译:Langmuir-Blodgett膜中形成的CuS纳米晶体的电子显微镜研究

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摘要

The morphology and structure of CuS crystals formed during sulfidation of copper behenate films obtained by the Langmuir-Blodgett (LB) method have been studied using high resolution electron microscopy. The average size of these crystals is about 3 nm and increases by a factor of approximately 2.2 after annealing at a temperature of 150℃ or above. Analysis of interplanar distances has shown that in the range of annealing temperatures of 150-200℃, CuS nanocrystals have a P6_3/mmc hexagonal crystal lattice with parameters a = 0.38 nm and c = 1.64 nm. At annealing temperatures of 250℃ or above, the Cu_2S crystalline phase begins to form, in addition to CuS nanocrystals. The proportion of this phase increases with increasing annealing temperature. Cu_2S nanocrystals have a hexagonal crystal lattice type with the P6_3/mmc spatial group and unit cell parameters a = 0.39 nm and c = 0.68 nm. Quantitative evaluation of copper and sulfur in individual CuS and Cu_2S nanocrystals was performed by local analysis of characteristic X-ray spectra.
机译:使用高分辨率电子显微镜研究了通过Langmuir-Blodgett(LB)方法获得的山be酸铜薄膜硫化过程中形成的CuS晶体的形态和结构。这些晶体的平均尺寸约为3 nm,在150℃或更高的温度下退火后,其平均尺寸会增加约2.2倍。平面间距的分析表明,在150-200℃的退火温度范围内,CuS纳米晶体具有P6_3 / mmc六方晶格,参数a = 0.38 nm和c = 1.64 nm。在250℃或更高的退火温度下,除了CuS纳米晶体外,Cu_2S晶相开始形成。该相的比例随着退火温度的升高而增加。 Cu_2S纳米晶体具有六方晶格类型,具有P6_3 / mmc空间群,晶胞参数a = 0.39 nm,c = 0.68 nm。通过局部分析特征X射线光谱对单个CuS和Cu_2S纳米晶体中的铜和硫进行定量评估。

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