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Preparation and formation mechanism of ZnS semiconductor nanowires made by the electrochemical deposition method

机译:电化学沉积法制备ZnS半导体纳米线的制备及形成机理

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摘要

ZnS nanowire arrays have been prepared for the first time by direct-current electrodeposition into the nanopores of porous anodic alumina membranes (AAMs), and the growth mechanism is that metal cations are firstly reduced and then react with elemental S to form ZnS nanowire arrays in the nanopores of AAMs. The nanopores of AAMs are of benefit to the formation of sulfide nanowires.
机译:ZnS纳米线阵列是通过直流电沉积到多孔阳极氧化铝膜(AAM)的纳米孔中而首次制备的,其生长机理是首先还原金属阳离子,然后与元素S反应形成ZnS纳米线阵列。 AAM的纳米孔。 AAM的纳米孔有利于硫化物纳米线的形成。

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