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Melting point oscillation of a solid over the whole range of sizes

机译:固体在整个尺寸范围内的熔点振荡

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It is intriguing that a solid containing similar to 10(1) atoms of Ga or IV-A elements (C, Si, Ge, Sn, and Pb) melts at temperatures that are higher than the melting point of the corresponding bulk solid (T-m,T-b) though the T-m of a solid in the 10(0-2) nm size range drops universally with the sample size. Consistent insight into the phenomenon of Tm oscillation (suppression followed by elevation as the solid size is reduced from bulk to subnanometre size) over the whole range of sizes remains a scientific challenge. Here we show that the T-m oscillation arises from the joint effect of bond order loss and its consequence on bond strength gain of small clusters in particular for Ga and atoms of the IV-A elements.
机译:有趣的是,含有类似于Ga或IV-A元素(C,Si,Ge,Sn和Pb)的10(1)原子的固体在高于相应大块固体(Tm)熔点的温度下熔化,Tb),尽管固体的Tm在10(0-2)nm尺寸范围内随样品尺寸普遍下降。在整个尺寸范围内,对Tm振荡现象的一致见解(随着固体尺寸从堆积尺寸减小到亚纳米尺寸,抑制继之以升高)仍然是科学挑战。在这里,我们表明,T-m振荡起因于键序损失的联合效应及其对小簇的键强度提高的结果,尤其是对于Ga和IV-A元素的原子而言。

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