首页> 外文期刊>Nanotechnology >Bandgap engineering of zigzag graphene nanoribbons by manipulating edge states via defective boundaries
【24h】

Bandgap engineering of zigzag graphene nanoribbons by manipulating edge states via defective boundaries

机译:之字形石墨烯纳米带的带隙工程通过有缺陷的边界操纵边缘状态

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

One of the most severe limits of graphene nanoribbons (GNRs) in future applications is that zigzag GNRs (ZGNRs) are gapless, so cannot be used in field effect transistors (FETs), and armchair GNR (AGNR) based FETs require atomically precise control of edges and width. Using the tight-binding approach and first principles method, we derived and proved a general boundary condition for the opening of a significant bandgap in ZGNRs with defective edge structures. The proposed semiconducting ZGNRs have some interesting properties one of which is that they can be embedded and integrated in a large piece of graphene without the need to completely cut them out. We also demonstrated a new type of high-performance all-ZGNR FET. Previous proposals of graphene FETs are all based on AGNRs.
机译:未来应用中石墨烯纳米带(GNR)的最严格限制之一是曲折GNR(ZGNR)是无间隙的,因此不能用于场效应晶体管(FET),基于扶手椅GNR(AGNR)的FET需要对原子的精确控制边缘和宽度。使用紧结合方法和第一原理方法,我们推导并证明了具有缺陷边缘结构的ZGNR中显着带隙开口的一般边界条件。拟议的半导体ZGNR具有一些有趣的特性,其中之一是它们可以嵌入并集成在一大片石墨烯中,而无需完全切掉它们。我们还演示了一种新型的高性能全ZGNR FET。先前的石墨烯FET提案全部基于AGNR。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号