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Step and repeat UV nanoimprint lithography on pre-spin coated resist film: A promising route for fabricating nanodevices

机译:在预旋涂的抗蚀剂膜上分步重复紫外纳米压印光刻:制造纳米器件的有前途的途径

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摘要

A step and repeat UV nanoimprint lithography process on pre-spin coated resist film is demonstrated for patterning a large area with features sizes down to sub-15 nm. The high fidelity between the template and imprinted structures is verified with a difference in their line edge roughness of less than 0.5 nm (3s deviation value). The imprinted pattern's residual layer is well controlled to allow direct pattern transfer from the resist into functional materials with very high resolution. The process is suitable for fabricating numerous nanodevices.
机译:演示了在预旋涂抗蚀剂膜上进行的分步重复UV纳米压印光刻工艺,可用于对特征尺寸低至15 nm以下的大面积区域进行构图。模板和压印结构之间的高保真度通过线边缘粗糙度的差小于0.5 nm(3s偏差值)来验证。压印图案的残留层得到了很好的控制,可以将图案直接从抗蚀剂转移到具有高分辨率的功能材料中。该方法适合于制造许多纳米器件。

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