Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K

摘要

We present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal-organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K. These results are an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.