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Tungsten oxide nanowires synthesized by a catalyst-free method at low temperature

机译:低温无催化剂合成钨氧化物纳米线

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We report the synthesis of tungsten oxide W_(18)O_(49) nanowires by thermal evaporation at low temperature without using catalysts. By placing tungsten powder in the high temperature zone at 650 deg C and tungsten substrate in the low temperature zone at 400 deg C of a tube furnace, W_(18)O_(49) nanowires with diameters of 10-50 nm are produced with high yield. The nanowires extend to 500-1500 nm length, and the cross-sectional shapes are circular or polygonal. The roles of the source material, the pre-oxide layer on the substrate and the temperature of the reactor are also investigated. It is shown that the presence of oxygen on the W surface is essential for tungsten oxide nanowire growth.
机译:我们报告了通过在不使用催化剂的情况下在低温下进行热蒸发来合成氧化钨W_(18)O_(49)纳米线的方法。通过在管式炉中将钨粉置于650摄氏度的高温区中并将钨基体置于400摄氏度的低温区中,可以高直径生产直径为10-50 nm的W_(18)O_(49)纳米线让。纳米线延伸至500-1500nm的长度,并且横截面形状为圆形或多边形。还研究了原料的作用,基板上的预氧化物层和反应器的温度。已经表明,在W表面上存在氧对于氧化钨纳米线的生长是必不可少的。

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