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Fabrication and magnetotransport properties of ordered b-100 nm pseudo-spin-value element arrays

机译:有序b-100 nm伪自旋值元素阵列的制备和磁输运性质

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We prepared ordered sub-100 nm pseudo-spin-valve (PSV) element arrays by electrodeposition of NiFe/Cu/Co into the pores of self-organized nanoporous anodized aluminium templates. Field-emission scanning electron microscopy reveals that the sub-100 nm PSV arrays, of uniform size, are well separated and exhibit a perfect two-dimensional array with a hexagonal pattern. The easy-axis hysteresis loops show two distinct steps related to the separate reversal of soft (NiFe) and hard (Co) layers. The switching fields of the PSV arrays are approximately -50 Oe for the NiFe and 570 Oe for the Co. The dependence of the magnetoresistance on the Cu spacer layer thickness indicates the presence of an oscillatory interlayer exchange coupling through the Cu layers.
机译:我们通过将NiFe / Cu / Co电沉积到自组织的纳米多孔阳极氧化铝模板的孔中,制备了有序的100 nm以下伪旋转阀(PSV)元素阵列。场发射扫描电子显微镜显示,大小均一的亚100 nm PSV阵列被很好地分离,并显示具有六边形图案的完美二维阵列。易轴磁滞回线显示了两个独立的步骤,分别与软(NiFe)和硬(Co)层的反转有关。对于NiFe,PSV阵列的切换场约为-50 Oe,对于Co,约为570 Oe。磁阻对Cu间隔层厚度的依赖性表明存在通过Cu层的振荡层间交换耦合。

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