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Direct evidence of type II band alignment in nanoscale P3HT/CdSe heterostructures

机译:纳米级P3HT / CdSe异质结构中II型能带排列的直接证据

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Due to inherent advantages of both constituent materials, organic/inorganic hybrid composites have attracted increasing attention. One of the fundamental issues needed to be resolved is their band alignment, which governs most of the electrical and optical properties. Here, we report the investigation of optical transition in poly(3-hexylthiophene) (P3HT)/CdSe nano-composites (NCs). It is found that the relaxation dynamics of photo-carriers in NCs is dominated by charge separation effects. Based on the band bending effect and the quantum confinement energy of electrons in the conduction band of CdSe quantum dots, we provide direct evidence of type II band alignment in P3HT/CdSe NCs. The establishment of a type II transition in NCs is very useful for the future design of efficient optoelectronic devices based on conjugated polymer/semiconductor hybrid systems.
机译:由于两种组成材料的固有优点,有机/无机杂化复合材料已引起越来越多的关注。需要解决的基本问题之一是它们的能带对准,它支配着大多数的电学和光学特性。在这里,我们报告在聚(3-己基噻吩)(P3HT)/ CdSe纳米复合材料(NCs)中的光学跃迁的研究。发现在NC中,光子的弛豫动力学受电荷分离效应的支配。基于能带弯曲效应和CdSe量子点导带中电子的量子约束能量,我们提供了P3HT / CdSe NCs中II型能带对准的直接证据。在NC中建立II型过渡对于基于共轭聚合物/半导体混合系统的高效光电器件的未来设计非常有用。

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