Fast growth of branched nickel monosilicide nanowires by laser-assisted chemical vapor deposition

摘要

Branched nickel monosilicide (NiSi) nanowires (NWs), for the first time, have been synthesized on Ni foams by laser-assisted chemical vapor deposition using disilane precursor molecules. Studies indicate that 600 °C is the threshold temperature for the growth of a large number of branched NiSi NWs with 100-500nm long branches extending from the main stems. Below the threshold temperature, unbranched NiSi NWs were obtained. The density of the branched NiSi NWs is relatively higher in comparison to that of the unbranched ones. The growth rate of the branched NiSi NWs at 700 °C is estimated up to 10μmmin~(-1). High-resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy of the branched NiSi NWs suggest that the formation of these branched nanostructures is ascribed to the Ni-dominant diffusion process. These NiSi NWs with branched nanostructures could bring them new opportunities in nanodevices.