CdSe(ZnS) nanocomposite luminescent high temperature sensor

摘要

High temperature luminescence-based sensing is demonstrated by embedding colloidal CdSe(ZnS) quantum dots into a high temperature SiO_2 dielectric matrix. The nanocomposite was fabricated by a solution process method. As-prepared CdSe(ZnS) quantum dots in the nanocomposite sensor show an absorption band at a wavelength of 600nm (2.06eV). Photoluminescence (PL) measurements show a room temperature emission peak at 606nm (2.04eV). The temperature-dependent emission spectra study shows for the first time a CdSe(ZnS)-SiO_2 nanocomposite-based high temperature sensor. The temperature-dependent spectral and intensity modes of the nanocomposite thin film photoluminescence were investigated from 295-525K. The sensor shows a variation of the emission wavelength as a function of temperature with a sensitivity of ～ 0.11nm°C~(-1). The film morphology and roughness are characterized using AFM.