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SiO_2 nanodot arrays using functionalized block copolymer templates and selective silylation

机译:使用功能化嵌段共聚物模板和选择性甲硅烷基化的SiO_2纳米点阵列

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摘要

Silicon oxide nanodot arrays were fabricated using functionalized block copolymer templates and selective silylation. A polystyrene-b-poly(acrylic acid/acrylic anhydride) (PS-b-PAA/AN) thin film containing spherical nanodomains was used as a template to build nanoscopic silica structures. A PS-b-PAA/AN thin film was prepared by acid-catalyzed thermal deprotection of polystyrene-b-poly(tert-butyl acrylate) on an SU-8 resist film containing a photoacid generator. This resulting film has excellent solvent and thermal resistance due to crosslinked anhydride linkages in carboxyl-functionalized PAA/AN block domains. Silicon was introduced by spin-spraying of hexamethyldisilazane (HMDS) over the entire surface of a self-assembled PS-b-PAA/AN thin film. HMDS was selectively reacted with carboxylic acid groups in spherical domains of a PAA/AN block. SiO_2 nanodot arrays were generated by oxygen reactive ion etching.
机译:使用功能化的嵌段共聚物模板和选择性甲硅烷基化法制备了氧化硅纳米点阵列。包含球形纳米域的聚苯乙烯-b-聚(丙烯酸/丙烯酸酐)(PS-b-PAA / AN)薄膜用作模板以构建纳米级二氧化硅结构。通过在包含光酸产生剂的SU-8抗蚀剂膜上对聚苯乙烯-b-聚(丙烯酸叔丁酯)进行酸催化的热脱保护来制备PS-b-PAA / AN薄膜。由于在羧基官能化的PAA / AN嵌段结构域中的交联酸酐键,所得膜具有出色的溶剂和耐热性。通过在自组装PS-b-PAA / AN薄膜的整个表面上旋转喷涂六甲基二硅氮烷(HMDS)引入硅。 HMDS与PAA / AN嵌段的球形区域中的羧酸基团选择性反应。 SiO_2纳米点阵列是通过氧反应离子刻蚀产生的。

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