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Synthesis and I-V properties of aligned coper nanowires

机译:对准铜纳米线的合成及IV性能

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This paper reports the synthesis of well-aligned copper nanowires using an electrochemical deposition template technique. The electrical properties of copper nanowire arrays synthesized within vertical pores of alumina template were measured using a current-sensing atomic force microscope (AFM), with bias voltage applied between the AFM tip and the gold back-electrode. Nonlinear current-voltage (I-V) characteristics of copper nanowire arrays are observed; this is attributed to the impurities near the wire-lead contact region. These vertical copper nanowire arrays are suitable for use in fabricating nanoelectronic devices.
机译:本文报道了使用电化学沉积模板技术合成取向良好的铜纳米线的方法。使用电流感应原子力显微镜(AFM)测量氧化铝模板垂直孔内合成的铜纳米线阵列的电性能,并在AFM尖端和金背电极之间施加偏置电压。观察到铜纳米线阵列的非线性电流-电压(I-V)特性;这归因于导线接触区域附近的杂质。这些垂直的铜纳米线阵列适合用于制造纳米电子器件。

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