Optical properties of indium nitride nanorods prepared by chemical-beam epitaxy

摘要

The optical properties of indium nitride nanorods grown by chemical-beam epitaxy are investigated by photoluminescence (PL) and Raman spectroscopy. The PL peaks show a blue shift from 0.69 to 0.79 eV, which is associated with a decrease in the size of the nanorods from 40 to 5 nm. Judging from the Raman spectra and transmission electron diffraction of these nanorods, it can be concluded that the quantum size effect is the most likely factor causing the PL shift, rather than the strain or Moss-Burstein effects.