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Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer

机译:使用缓冲层的生长方向可控的ZnO纳米棒的合成和微观结构表征

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摘要

The growth direction and morphology of one-dimensional ZnO nanostructures grown by metal-organic chemical vapour deposition (MOCVD) were modulated by changing the growth temperature of previously deposited ZnO buffer layers that were used as a template. The ZnO nanorods grown on the low-temperature deposited buffer layer were regularly inclined with respect to the substrate surface and show in-plane alignment with azimuthally six-fold symmetry. In contrast, deposition of the buffer layer at higher growth temperature led to the formation of vertically well-aligned ZnO nanorods. In addition, the ZnO nanorods grown on the buffer layer deposited at low growth temperature show a growth direction of [1010], unlike the conventional ZnO nanorods showing a growth direction of [0001]. The microstructural analysis and atomic modelling of the formation of regularly inclined nanorods using transmission electron microscopy are presented.
机译:通过改变先前沉积的用作模板的ZnO缓冲层的生长温度,可以调节通过金属有机化学气相沉积(MOCVD)生长的一维ZnO纳米结构的生长方向和形态。在低温沉积的缓冲层上生长的ZnO纳米棒相对于基板表面规则倾斜,并以六向对称的方位角显示面内对齐。相反,在较高生长温度下沉积缓冲层导致形成垂直良好排列的ZnO纳米棒。另外,与在低生长温度下沉积的缓冲层上生长的ZnO纳米棒的生长方向为[1010],与常规的ZnO纳米棒的生长方向为[0001]不同。介绍了使用透射电子显微镜对规则倾斜的纳米棒形成的微观结构分析和原子建模。

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