The influence of ZnO nanorods on the poly-(3,4-ethylenedioxythiophene):poly-(styrenesulphonic acid) buffer layer in a polymer light-emitting diode

摘要

The luminescence efficiency of polymer light-emitting diodes is enhanced to more than double by doping ZnO nanorods into the poly-(3,4-ethylenedioxythiophene):poly-(styrenesulphonic acid) (PEDOT: PSS) hole buffer layer. It was demonstrated, by means of the optical and electrical characteristics and Raman spectroscopy, that there is a certain interaction between the thiophene of PEDOT and the ZnO nanorods, which decreased the amount of defect states at the interface between the PEDOT hole buffer layer and the poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) emitting layer and thus increased the device efficiency and stability.