Inter-well transitions and negative magnetoresistance in double-quantum-well heterostructures

摘要

The weak-localization correction to the conductivity in coupled double-quantum-well structures is studied both experimentally and theoretically. The statistics of closed paths has been obtained from the analysis of magnetic field and temperature dependences of negative magnetoresistance for a magnetic field perpendicular and parallel to the structure plane. The comparison of experimental data with the results of computer simulation of carrier motion over two 2D layers with scattering shows that inter-layer transitions play a decisive role in the weak localization.