Unipolar semiconductor lasers on asymmetric quantum wells

摘要

We propose an original design of the active element of a quantum unipolar semiconductor laser for optical pumping. The peculiarities of the propose design are strongly asymmetric barriers surrounding a double-well active element. The suppression of inter subband transitions to the lower working subband can be readily achieved if the transformation point of electronic state dimensionality for the lower subband occurs at small momentum. By this means the population inversion conditions in this system can be easily realized. The results of photoluminescence studies of the individual elements of the proposed structure are presented.