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The effect of deuterium on the optical properties of free-standing porous silicon layers

机译:氘对自支撑多孔硅层光学性能的影响

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We report our recent results of the effect of deuterium termination on the optical properties of porous Si nanostructures. The photoluminescence (FL) spectrum of deuterium-terminated porous Si (D-PS) was different from that of ordinary hydrogen-terminated porous Si (H-PS) although H-PS and D-PS show the same structure and the same absorption spectrum. We quantitatively discuss these results based on the trapping of conduction electrons at a surface Si-H or Si-D. In addition to these basic results, we also show that the replacement of hydrogen with deuterium reduces the FL degradation. Surface termination, especially photo-induced oxidation of the surface, was precisely studied by Fourier transform infrared absorption measurements.
机译:我们报告了我们最新的结果,氘终止对多孔Si纳米结构的光学性能的影响。尽管H-PS和D-PS显示相同的结构和相同的吸收光谱,但氘封的多孔硅(D-PS)的光致发光(FL)谱与普通氢封孔的多孔Si(H-PS)的谱不同。我们基于在表面Si-H或Si-D处捕获导电电子来定量讨论这些结果。除这些基本结果外,我们还表明用氘代替氢可减少FL降解。表面终止,特别是光诱导的表面氧化,已通过傅里叶变换红外吸收测量进行了精确研究。

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