The electrical conductivity of hydrogenated nanocrystalline silicon investigated at the nanoscale

摘要

Hydrogenated nanocrystalline silicon (nc-Si:H) is a multiphase, heterogeneous material, composed of Si nanocrystals embedded in an amorphous matrix. It has been intensively studied in the last few years due to its great promise for photovoltaic and optoelectronics applications. The present paper aims to study the current transport mechanisms in nc-Si:H by mapping the local conductivity at the nanoscale. The role of B doping in nc-Si:H is also investigated. Conductivity maps are obtained by atomic force microscopy using a conductive tip. Differences and similarities between intrinsic and doped nc-Si:H conductivity maps were observed and these are also explained on the basis of recently published computational studies.