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The tunable bistable and multistable memory effect in polymer nanowires

机译:聚合物纳米线中的可调双稳态和多稳态记忆效应

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摘要

Tunable bistable and multistable resistance switching in conducting polymer nanowires has been reported. These wires show reproducible switching transition under several READ-WRITE-ERASE cycles. The switching is observed at low temperature and the ON/OFF resistance ratio for the voltage biased switching transition was found to be more than 10(3). Current biased measurements show lower ON/OFF ratio and some of the nanowires exhibit a multistable switching transition in current biased measurements. The threshold voltage for switching and the ON/OFF resistance ratio can be tuned by changing doping concentration of the nanowires.
机译:已经报道了导电聚合物纳米线中的可调双稳态和多稳态电阻转换。这些导线在多个READ-WRITE-ERASE周期下显示出可重现的开关转换。在低温下观察到开关,发现电压偏置开关转换的开/关电阻比大于10(3)。电流偏置的测量结果显示较低的开/关比,并且某些纳米线在电流偏置的测量结果中显示出多稳态的开关转换。可以通过改变纳米线的掺杂浓度来调节用于切换的阈值电压和开/关电阻比。

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