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Growth and characterization of nitrogen-doped single-walled carbon nanotubes by water-plasma chemical vapour deposition

机译:水等离子化学气相沉积法生长掺氮单壁碳纳米管及其表征

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Nitrogen- doped single-walled carbon nanotubes (N-SWNTs) are directly grown on SiO2/Si substrates at 450 degrees C with methane and ammonia gases by water-plasma chemical vapour deposition. The strongest radial breathing mode peak in Raman spectra of the grown N-SWNTs, probed with a 633 nm laser excitation, was assigned to (7, 5) semiconducting nanotubes with a diameter of 0.83 nm. As the doped nitrogen content increases, the D-band to G-band ratio in Raman spectra, indicating the imperfection of nanotubes, gradually increases and saturates at around 4%. X-ray photoelectron spectroscopy shows that nitrogen atoms are doped with a pyridine-like configuration in the N-SWNTs.
机译:氮掺杂的单壁碳纳米管(N-SWNT)通过水等离子体化学气相沉积,在450°C的甲烷/氨气下直接在SiO2 / Si衬底上生长。将生长的N-SWNT的拉曼光谱中最强的径向呼吸模式峰(用633 nm激光激发进行探测)分配给直径为0.83 nm的(7、5)个半导体纳米管。随着掺杂氮含量的增加,拉曼光谱中的D波段与G波段的比率表明纳米管的缺陷,逐渐增加并饱和在4%左右。 X射线光电子能谱显示,N-SWNT中氮原子被吡啶样结构掺杂。

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