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Nanoscale electronic devices on carbon nanotubes

机译:碳纳米管上的纳米级电子设备

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Conductivity measurements were performed on bundles of single-walled carbon nanotubes with the aid of a scanning tunneling microscope (STM). Semimetallic current-voltage (I-V) characteristics generally indicated the bundles to be electronically similar to graphite. However, by moving the STM tip along the length of the nanotubes, sharp deviations in the I-V characteristics could also be observed. Well-defined positions were found at which the nanotube transport current changed abruptly from a graphitic response to one that is highly nonlinear and asymmetric, including near-perfect rectification. This abrupt change in the nanotube transport suggests that the STM tip had passed a region of the nanotube which acts less like a wire than it does a Schottky barrier or other heterojunction. Similar on-tube nanodevices have been theoretically predicted for point defects in individual carbon nanotubes and are consistent with our observations. [References: 19]
机译:借助于扫描隧道显微镜(STM)在单壁碳纳米管束上进行电导率测量。半金属电流-电压(I-V)特性通常表明束在电子上类似于石墨。但是,通过沿纳米管的长度方向移动STM尖端,也可以观察到I-V特性的急剧偏差。发现了明确定义的位置,纳米管的传输电流从石墨的响应突然改变为高度非线性和不对称的位置,包括接近完美的整流。纳米管传输的这种突然变化表明,STM尖端已经通过了纳米管区域,该区域的行为不像导线,而是肖特基势垒或其他异质结。从理论上讲,类似的管上纳米器件可预测单个碳纳米管中的点缺陷,并且与我们的观察结果一致。 [参考:19]

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