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Semiconductor nanoparticles for quantum devices

机译:量子器件的半导体纳米粒子

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Semiconductor nanoparticles were synthesized by exposing fatty acid salt Langmuir-Blodgell films to the atmosphere of H2S. The particle sizes were characterized by small-angle x-ray scattering of their solutions using synchrotron radiation source at higher resolution, as it was impossible previously to study it with usual laboratory x-ray sources. The particle sizes were found to correspond with the demands of single-electron and quantum junctions. Semiconductor heterostructures were grown by self-aggregation of these particles of different types. Electrical properties of these nanostructures were studied by using STM. Voltage-current characteristics revealed the presence of differential negative resistance. Measurements confirmed the formation of semiconductor superlattices directed towards a development of new nanodevices, such as tunnelling diodes and semiconductor lasers. [References: 25]
机译:通过将脂肪酸盐Langmuir-Blodgell膜暴露在H2S气氛中来合成半导体纳米颗粒。粒径的特征是使用同步加速器辐射源以较高的分辨率对其溶液进行小角度X射线散射,因为以前不可能用常规的实验室X射线源对其进行研究。发现粒度符合单电子和量子结的要求。半导体异质结构是通过这些不同类型粒子的自聚集而生长的。这些纳米结构的电学性质通过使用STM研究。电压-电流特性表明存在差分负电阻。测量结果证实了半导体超晶格的形成,该超晶格旨在开发新型纳米器件,例如隧穿二极管和半导体激光器。 [参考:25]

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