Single-electron transistors with point contact channels

摘要

Single-electron transistors with point contact channels have been fabricated by using a new nanoelectrode-pair technique. Coulomb blockade oscillations are observed from most of these devices and these oscillations are nonperiodic as no voltage bias is applied to the nanoelectrode pair. Applying a negative bias squeezes the point contact channel and makes the oscillations periodic. This is explained by the formation of single dot structures.