Thin film resists for registration of single-ion impacts

摘要

We demonstrate registration of the location of the impact site of single ions using a thin film polymethyl methacrylate resist on a SiO_2/Si substrate. Carbon nanotube-based atomic force microscopy is used to reveal craters in the surface of chemically developed films, consistent with the development of latent damage induced by single-ion impacts. The responses of thin PMMA films to the implantation of He~+ and Ga~+ ions indicate the role of electronic and nuclear energy loss mechanisms at the single-ion level.