The fabrication of MP (M = In and Ga) nanowires by a new Ullmann reaction

摘要

InP and GaP nanowires have been synthesized from an Ullmann-like reaction of elemental indium and gallium with triphenyl phosphine at about 350-400 deg C for 8 h. The as-prepared samples have been structurally characterized by powder x-ray diffractometer (XRD), x-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive x-ray spectroscopy (EDS), GCT-MS, FTIR and ~1H-NMR. XRD, electron diffraction patterns and HRTEM images show that the nanowires have the zinc blende structure based on a vapour-liquid-solid growth mechanism.