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Shot noise in parallel wires

机译:平行线中的散粒噪声

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We report first-principles calculations of shot noise properties of parallel carbon wires in the regime in which the interwire distance is much smaller than the inelastic mean free path. We find that, with increasing interwire distance, the current rapidly approaches a value close to twice the current of each wire, while the Fano factor, for the same distances, is still larger than the Fano factor of a single wire. This enhanced Fano factor is the signature of the correlation between electron waves travelling along the two different wires. In addition, we find that the Fano factor is very sensitive to bonding between the wires, and can vary by orders of magnitudes on changing the interwire spacing by less than 0.5 A. While these findings confirm that shot noise is a very sensitive tool for probing electron transport properties in nanoscale conductors, they also suggest that considerable experimental control of these structures is required to employ them in electronics.
机译:我们报告的原理是,平行碳线的散粒噪声特性在线间距离远小于非弹性平均自由程的情况下进行了计算。我们发现,随着线间距离的增加,电流迅速接近每根线电流的两倍,而对于相同距离的Fano因子仍大于单根线的Fano因子。这种增强的Fano因子是沿着两条不同导线传播的电子波之间相关性的标志。另外,我们发现Fano因子对导线之间的键合非常敏感,并且在改变导线间间距小于0.5 A时会变化几个数量级。尽管这些发现证实散粒噪声是探测的非常敏感的工具纳米级导体的电子传输特性,他们还建议对这些结构进行大量的实验控制,以将其应用于电子领域。

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