InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy

摘要

Single crystalline and single phase InxGa_(1-x)N nanopillars were grown spontaneously on (111) silicon substrate by plasma assisted molecular beam epitaxy. The surface morphology,structural quality, and optoelectronic properties of InGaN nanopillars were analyzed using scanning electron microscopy (SEM), energy dispersive x-ray (EDXA) analysis, high resolution x-ray diffraction (HR-XRD), and both room and low temperature photoluminescence spectra. The EDXA results showed that these nanopillars were composed of InGaN and the amount of indium incorporation in InxGa_(1-x)N NPs could be controlled by changing the growth temperature. The room temperature and low temperature PL spectra revealed that the emission wavelength could be tuned from a blue to green luminescent region depending on the growth temperature. The wavelength tuning was attributed to a higher amount of In incorporation at a lower growth temperature which was consistent with the EDXA and HR-XRD results.