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Electron-beam writing of photonic crystal patterns using a large beam-spot diameter

机译:使用大束斑直径的电子束写入光子晶体图案

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摘要

A simple and cost-effective method of patterning photonic crystal (PhC) or similar structures by electron beam lithography is demonstrated. Instead of using fine resolution and a multitude of small-sized beam spots to write a single hole, the combination of a single electron-beam spot having the size of the hole and a position resolution equal to the period of the PhC is used. This single-spot exposure scheme typically shows an order-of-magnitude reduction in the required job time compared to that for the conventional multi-spot exposure scheme. In addition, the inherently circular shape of the electron-beam spot is directly transferred into the UV3 resist used in this work, leaving uniform circular holes after development. A cross-sectional view of the holes shows a very good verticality in the sidewalls of the resist. A modified scheme using four spots is also demonstrated which alleviates some limitations encountered in the single-spot exposure scheme.
机译:演示了一种通过电子束光刻对光子晶体(PhC)或类似结构进行构图的简单且经济高效的方法。代替使用精细的分辨率和多个小束斑来写单个孔,而是使用具有孔大小和等于PhC周期的位置分辨率的单个电子束斑的组合。与传统的多点曝光方案相比,这种单点曝光方案通常显示所需工作时间减少了一个数量级。此外,电子束点的固有圆形形状直接转移到用于此工作的UV3抗蚀剂中,显影后留下均匀的圆形孔。孔的横截面图在抗蚀剂的侧壁中显示出非常好的垂直度。还展示了使用四个点的改进方案,该方案减轻了单点曝光方案中遇到的一些限制。

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