Electrical bistabilities and memory stabilities of nonvolatile bistable devices fabricated utilizing C_(60) molecules embedded in a polymethyl methacrylate layer

摘要

Current-voltage (I-V) measurements on Al/fullerene (C_(60)) molecules embedded in polymethyl methacrylate/Al devices at 300 K showed a current bistability due to the existence of the C_(60) molecules. The on/off ratio of the current bistability for the memory devices was as large as 10~3. The retention time of the devices was above 2.5 × 10~4 s at room temperature, and cycling endurance tests on these devices indicated that the ON and OFF currents showed no degradation until 50 000 cycles. Carrier transport mechanisms for the nonvolatile bistable devices are described on the basis of the I-V experimental and fitting results.