A 1-12-GHz VARIABLE-GAIN LOW-NOISE AMPLIFIER MMIC USING 0.25-μm SiGe BiCMOS TECHNOLOGY

摘要

This article introduces an 1-12-GHz differential twostage variable-gain low-noise amplifier (VGLNA) using 0.25-μm SiGe:C BiCMOS commercial process technology for ultra-wideband system. The results of the fabricated monolithic microwave integrated circuit amplifier show 18-dB gain with a 3-dB frequency band of 1.3-11.9 GHz and noise figure of less than 5 dB under the bias condition of 2.5-V supply voltage and 55-mW total dc power consumption. The gaincontrol range is from -17 dB to +18 dB. The chip size of the manufactured VGLNA is 1.1×0.9 mm~2 including all testing pads for RF and dc probes.