AN EIGHT-PHASE DIVIDE-BY-4 SiGe HBT RING-OSCILLATOR-BASED INJECTION-LOCKED FREQUENCY DIVIDER

摘要

This article presents an eight-phase divide-by-4 silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) injection-locked frequency divider (ILFD). The ILFD is based on a four-stage ring oscillator and was fabricated in the 0.35μm SiGe 3P3M BiCMOS technology. The divide-by-4 function is performed by injecting a signal to the base of the tail HBT. At the supply voltage V_(dd) of 1.3 V and at the incident power of 0 dBm, the locking range is about 2.55 GHz from the incident frequency 12.7 to 15.25 GHz. The die area is 0.54×0.54 mm~2.