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首页> 外文期刊>Materials at High Temperatures >Joining of CyC–SiC using boron-modified phenolic resin with SiO_2 and B_4C additives
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Joining of CyC–SiC using boron-modified phenolic resin with SiO_2 and B_4C additives

机译:硼改性酚醛树脂与SiO_2和B_4C添加剂的CyC–SiC连接

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摘要

Joining of carbon fibre reinforced C– SiC dual matrix composite has been realized through a reaction joining process using boron-modified phenolic resin with B_4C and SiO_2 additives. The effect of the technological parameters on the strength of joints was investigated. The optimized technological parameters are the curing temperature of 200℃, the curing time of 2 hours and the curing pressure of 30 kPa, under which conditions, the obtained strength of the joint is equal to 82.6% of that of the substrate. The interlayer composed of Si, C, B and O is basically uniform and dense. There are no obvious cracks nor pores at the interfaces. The elements migrate across the interfaces, contributing to the enhancement of the joint strength. The results of heat treatment at 1500℃ show good heat resistance of the joints. The B4C and SiO_2 additives contribute to the densification of the interlayer and the adhesion at the interfaces.
机译:通过使用硼改性的酚醛树脂与B_4C和SiO_2添加剂的反应连接工艺,实现了碳纤维增强C–SiC双基复合材料的连接。研究了工艺参数对接头强度的影响。优化的工艺参数为:固化温度为200℃,固化时间为2小时,固化压力为30 kPa,在此条件下,所获得的接缝强度等于基材的82.6%。由Si,C,B和O组成的中间层基本上均匀且致密。界面处没有明显的裂纹或气孔。元素在界面上迁移,有助于增强接头强度。 1500℃的热处理结果表明接头具有良好的耐热性。 B4C和SiO_2添加剂有助于中间层的致密化和界面粘合。

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