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Design methodology of embedded DRAM with virtual-socket architecture

机译:虚拟插槽架构嵌入式DRAM的设计方法

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This paper proposes the virtual-socket architecture in order to reduce the design turn-around time (TAT) of the embedded DRAM. The required memory density and the function of the embedded DRAM are system dependent. In the conventional design, the DRAM control circuitry with the DRAM memory array is handled as a hardware macro, resulting in the increase in design TAT. On the other hand, our proposed architecture provides the DRAM control circuitry as a software macro to take advantage of the automated tools based on synchronous circuit design. With array-generator technology, this architecture can achieve high quality and quick turn-around time (QTAT) of flexible embedded DRAM that is almost the same as the CMOSASIC. We applied this virtual-socket architecture to the development of the 64-Mb synchronous DRAM core using 0.18-μm design rule and confirmed the high-speed operation, 166 MHz at CAS latency of two, and 180MHz at that of three. The experimental results show that our proposed architecture can he applied to the development of the high-performance embedded DRAM with design QTAT.
机译:本文提出了虚拟插槽架构,以缩短嵌入式 DRAM 的设计周转时间 (TAT)。所需的内存密度和嵌入式 DRAM 的功能取决于系统。在传统设计中,带有DRAM存储器阵列的DRAM控制电路被作为硬件宏处理,导致设计TAT的增加。另一方面,我们提出的架构将DRAM控制电路作为软件宏提供,以利用基于同步电路设计的自动化工具。借助阵列生成器技术,该架构可以实现与CMOSASIC几乎相同的灵活嵌入式DRAM的高质量和快速周转时间(QTAT)。我们将这种虚拟插槽架构应用于使用 0.18 μm 设计规则的 64 Mb 同步 DRAM 内核的开发,并确认了高速运行,在 2 的 CAS 延迟下为 166 MHz,在 3 的 CAS 延迟下为 180MHz。实验结果表明,所提出的架构可以应用于设计QTAT的高性能嵌入式DRAM的开发。

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