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首页> 外文期刊>International Journal of Quantum Chemistry >Bi(F, O)2.45: AN ANION-EXCESS FLUORITE DEFECT STRUCTURE DERIVING FROM RHOMBOHEDRAL LnFO TYPE
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Bi(F, O)2.45: AN ANION-EXCESS FLUORITE DEFECT STRUCTURE DERIVING FROM RHOMBOHEDRAL LnFO TYPE

机译:Bi(F,O)2.45:菱形LnFO型衍生的阴离子过量萤石缺陷结构

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During a reinvestigation of the Bi2O3-BiF3 system, a nonstoichiometric oxidefluoride, of composition range Bi(F, O)2.50-Bi(F, O)2.43 at 500 C, was characterized by annealing at >300 C. Its crystal structure was solved by XRD on a single crystal of composition Bi(F, O)2.45, in the R-3m space group with cell parameters: a=4.1378(9) angstroms and c=20.321(3) angstroms (Shelxl program: wR2=7.2%, R1=3.5%). The structure of BiF1.90O0.55 derives from the well-known rhombohedral LnFO type by formation of 1:0:3 (or 1:0:2) clusters orientated along the [001] axis of the hexagonal associated cell in a partly ordered way. This orientation of the clusters preserves the O/F long range order characteristic of the LnFO type, despite a statistical replacement of almost half the O anions by F ones. As in the tetragonal anion-excess LaF1+2xO1-x and the orthorhombic SmF1+2xO1-x fluorite-related phases, the clustering mainly affects the F site: F anionic vacancies are associated to Fi interstitial anions and to Fr anions relaxed from the normal F site. In the clusters, Bi cations are in 9-fold or 10-fold coordination and the higher limit of anionic insertion (Bi2F4O composition) corresponds to a complete juxtaposition of 1:0:3 clusters. Near this limit, the excess anions tend to form quasi-continuous irregular 36 sheets perpendicular to the [001] axis of the hexagonal cell. 23 refs.
机译:在对Bi2O3-BiF3系统进行重新研究期间,组成范围为Bi(F,O)2.50-Bi(F,O)2.43的非化学计量氧化物氟化物在500°C下进行了退火处理,表征了其晶体结构通过XRD对R-3m空间群中组成为Bi(F,O)2.45的单晶进行晶胞参数:a = 4.1378(9)埃和c = 20.321(3)埃(Shelxl程序:wR2 = 7.2% ,R1 = 3.5%)。 BiF1.90O0.55的结构通过形成1:0:3(或1:0:2)簇而形成,该簇沿六面体相关细胞的[001]轴定向,并部分地有序排列,该结构源自众所周知的菱形LnFO类型办法。簇的这种取向保留了LnFO型的O / F远距离有序特征,尽管统计上几乎用O取代了一半的O阴离子。正如在过量的四方阴离子LaF1 + 2xO1-x和正交晶体SmF1 + 2xO1-x萤石相关的相中一样,聚集主要影响F位置:F阴离子空位与Fi间隙阴离子有关,并且与从正常弛豫的Fr阴离子有关。 F网站。在簇中,Bi阳离子的配位数为9倍或10倍,阴离子插入的上限(Bi2F4O组成)对应于1:0:3簇的完全并列。在此极限附近,过量的阴离子倾向于形成垂直于六边形电池的[001]轴的准连续不规则36片。 23个参考

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