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首页> 外文期刊>International Journal of Quantum Chemistry >Effect of Ge4+ ion on electrical properties of (La0.1Ca0.9)(Mn1-xGex)O-3
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Effect of Ge4+ ion on electrical properties of (La0.1Ca0.9)(Mn1-xGex)O-3

机译:Ge4 +离子对(La0.1Ca0.9)(Mn1-xGex)O-3电性能的影响

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摘要

Orthorhombic perovskite-type (La0.1Ca0.9)(Mn1-xGex) O-3 was synthesized in the range (0.00 less than or equal to x less than or equal to 0.10). Since the ionic radius of the Ge4+ ion is equal to that of the Mn4+ ion, the (Mn, Ge)O(1, 2) distances and the angles for (Mn, Ge)-O(1, 2)-(Mn, Gel are independent of the composition (x). From the measurement of the electrical resistivity (rho), ail manganates exhibit a metal-insulator transition. With increasing x, the metal-insulator transition temperature (T-t) increases and d rho/dT decreases. The cation-anion-cation overlap integrals are weakened by the Ge4+ ion. (C) 1998 Academic Press. [References: 10]
机译:斜方钙钛矿型(La0.1Ca0.9)(Mn1-xGex)O-3的合成范围为(0.00小于或等于x小于或等于0.10)。由于Ge4 +离子的离子半径等于Mn4 +离子的离子半径,因此(Mn,Ge)O(1,2)距离和(Mn,Ge)-O(1,2)-(Mn,凝胶与成分(x)无关,从电阻率(rho)的测量来看,所有锰酸盐都表现出金属-绝缘体转变,随着x的增加,金属-绝缘体转变温度(Tt)升高,d rho / dT降低。Ge4 +离子削弱了阳离子-阴离子-阳离子的重叠积分。(C)1998 Academic Press。[参考:10]。

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