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首页> 外文期刊>International Journal of Quantum Chemistry >Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te)(x)-(Bi0.5Sb1.5Te3)(1-x) (x=0-1.0) alloys prepared by spark plasma sintering
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Thermoelectric properties of p-type pseudo-binary (Ag0.365Sb0.558Te)(x)-(Bi0.5Sb1.5Te3)(1-x) (x=0-1.0) alloys prepared by spark plasma sintering

机译:火花等离子体烧结制备的p型拟二元(Ag0.365Sb0.558Te)(x)-(Bi0.5Sb1.5Te3)(1-x)(x = 0-1.0)合金的热电性能

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In this paper, pseudo-binary (Ag0.365Sb0.558Te)(x)-(Bi0.5Sb1.5Te3)(1-x) (X = 0-1.0) alloys were prepared using spark plasma sintering technique, and the composition-dependent thermoelectric properties were evaluated. Electrical conductivities range from 7.9 x 10(4) to 15.6 x 10(4) Omega(-1) m(-1) at temperatures of 507 and 318 K, respectively, being about 3.0 and 8.5 times those of Bi0.5Sb1.5Te3 alloy at the corresponding temperatures. The optimal dimensionless figure of merit (ZT) of the sample with molar fraction x = 0.025 reaches 1.1 at 478 K. whereas that of the ternary Bi0.5Sb1.5Te3 alloy is 0.58 near room temperature. The results also reveal that a direct introduction of Ag0.365Sb0.558Te in the Bi-Sb-Te system is much more effective to the property improvement than naturally precipitated Ag0.365Sb0.558Te in the Ag-doped Ag-Bi-Sb-Te system. (c) 2006 Elsevier Inc. All rights reserved.
机译:在本文中,使用火花等离子体烧结技术制备了伪二元(Ag0.365Sb0.558Te)(x)-(Bi0.5Sb1.5Te3)(1-x)(X = 0-1.0)合金,其成分为评估了依赖的热电性能。在507和318 K的温度下,电导率分别为7.9 x 10(4)至15.6 x 10(4)Omega(-1)m(-1),约为Bi0.5Sb1.5Te3的3.0和8.5倍合金在相应的温度下。摩尔分数x = 0.025的样品的最佳无量纲品质因数(ZT)在478 K时达到1.1,而三元Bi0.5Sb1.5Te3合金的最佳无因次品质因数在室温附近为0.58。结果还表明,在Bi-Sb-Te体系中直接引入Ag0.365Sb0.558Te比在掺Ag的Ag-Bi-Sb-Te中自然沉淀的Ag0.365Sb0.558Te更有效地改善了性能。系统。 (c)2006 Elsevier Inc.保留所有权利。

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