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首页> 外文期刊>International Journal of Quantum Chemistry >MRCI study of the photoelectron spectrum of GeC and GeSi and their GeC+ and GeSi+ ions
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MRCI study of the photoelectron spectrum of GeC and GeSi and their GeC+ and GeSi+ ions

机译:MRCI研究GeC和GeSi及其GeC +和GeSi +离子的光电子谱

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摘要

The lowest-lying states of the species GeC, GeC+, GeSi, and GeSi+ were studied using the multireference configuration interaction (MRCI) method and the aug-cc-pVQZ basis set. For the first time, the GeC+ molecule was characterized. The dissociation energy (D-o) of the ground state (X-3 Pi) of GeC is equal to 3.70 eV, showing good agreement with the theoretical result (3.90 eV) of Sari and colleagues. These results, however, are considerably smaller than the experimental value of 4.72 eV. The dissociation energy of the ground state (X-3 Sigma(-)) of GeSi is equal to 2.90 eV, and it is in very good agreement with the experimental value (3.08 eV). The most favorable transitions are A(3)Sigma(-) (GeC) --> X-4 Sigma(-) (GeC+), A(3)Sigma(-) (GeC) --> b(2)Pi (GeC+) and X-3 Sigma(-) (GeSi) --> X-4 Sigma(-) (GeSi+), which present very few peaks in the spectra. (C) 2006 Wiley Periodicals, Inc.
机译:使用多参考配置相互作用(MRCI)方法和aug-cc-pVQZ基集研究了GeC,GeC +,GeSi和GeSi +物种的最低卧床状态。首次表征了GeC +分子。 GeC的基态(X-3 Pi)的离解能(D-o)等于3.70 eV,与Sari及其同事的理论结果(3.90 eV)很好地吻合。但是,这些结果远小于4.72 eV的实验值。 GeSi的基态(X-3 Sigma(-))的解离能等于2.90 eV,与实验值(3.08 eV)非常吻合。最有利的过渡是A(3)Sigma(-)(GeC)-> X-4 Sigma(-)(GeC +),A(3)Sigma(-)(GeC)-> b(2)Pi( GeC +)和X-3 Sigma(-)(GeSi +)-> X-4 Sigma(-)(GeSi +),它们在光谱中几乎没有峰。 (C)2006年Wiley Periodicals,Inc.

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