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Borderline Cases in Density Functional Theory

机译:密度泛函理论中的临界案例

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We discuss two examples (antiferromagnetic order in transition metal oxides and van der Waals interaction) where density functional theory (DFT) seems to fail in giving an appropriate description of the actual physical situation.We analyze whether or not this failure reflects only a shortcoming of the approximations to the exchange-correlation functionals that are commonly used.It is shown that the well-known incapability of DFT to yield the correct antiferromagnetic (AF) moment and insulating properties of CoO and stoichiometric La_2CuO_4 may be indicative of a more fundamental deficiency,namely,absence of an exact noninteracting V-representability of the spin densities in AF materials.By enlarging and reducing the self-consistent DFT spin densities by an appropriate amount and simultaneously keeping the total densities fixed,one can turn CoO and La_2CuO_4 into insulators with the correct AF moments.We also discuss the ground-state energy of two noble gas atoms of rDELTA_Dius R_0 at a distance R2R_0,for which situation an exact DFT should yield a 1/R~6-dependence for the difference between the total energy of the bi-atom and the two atoms at infinite separation.Even if one improves the local density approximation to the exchange-correlation energy by grDELTA_Dient corrections,this dependence remains outside the current practical framework of DFT.We report and practically check a simple idea as to how this difficulty can be overcome.The method we develop also might prove useful in actually calculating the above defect spin densities for critical AF materials.
机译:我们讨论了两个例子(过渡金属氧化物中的反磁性顺序和范德华相互作用),其中密度泛函理论(DFT)似乎未能正确描述实际物理情况,我们分析了这种失败是否仅反映了以下缺点:结果表明,众所周知,DFT无法产生正确的反铁磁(AF)矩以及CoO和化学计量的La_2CuO_4的绝缘特性,这可能表明存在更根本的缺陷,通过增加和减少自洽的DFT自旋密度适当的数量并同时保持总密度固定,可以将CoO和La_2CuO_4转变为绝缘子,从而使AF材料的自旋密度没有精确的非相互作用V表示性。正确的AF矩。我们还讨论了rDELTA_Dius R_0的两个稀有气体原子在距离R 2R_0,在这种情况下,精确的DFT应使双原子和两个原子在无限分离时的总能量之差产生1 / R〜6-依赖关系,即使一个能改善局部密度近似通过grDELTA_Dient校正获得的交换相关能量,这种依赖性仍然不在DFT的当前实际框架之内。我们报告并实际检查了如何克服此困难的简单想法。我们开发的方法也可能被证明对实际计算DFT有帮助。高于关键AF材料的缺陷自旋密度。

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