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SINGLE-MODE GAAS/ALGAAS W WAVEGUIDES WITH A LOW PROPAGATION LOSS

机译:传播损耗低的单模GAAS / ALGAAS W波导

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摘要

We have designed a low-loss single-mode GaAs/AlGaAs optical waveguide with a symmetric five-layer heterostructure at the 1.31-mu m wavelength by use of an effective-index method. Waveguides with a W-shaped refractive-index profile have been grown by use of a metallo-organic chemical vapor deposition technique and fabricated with a chemical wet-etching method. Propagation loss has been measured by use of the Fabry-Perot resonance method and a sequential-cleaving experiment. The measured loss is as low as 0.19 dB/cm for waveguides with 2.3-mu m thickness and 4.3-mu m width, which is comparable to the lowest-loss semiconductor waveguides yet reported. These waveguides could be used to make low-loss modulators for guided-wave devices. (C) 1996 Optical Society of America [References: 25]
机译:我们设计了一种低损耗的单模GaAs / AlGaAs光波导,该波导采用有效折射率法在1.31微米波长处具有对称的五层异质结构。通过使用金属有机化学气相沉积技术来生长具有W形折射率分布的波导,并通过化学湿蚀刻法制造波导。已经通过使用Fabry-Perot共振方法和顺序切割实验来测量传播损失。对于厚度为2.3微米,宽度为4.3微米的波导,所测得的损耗低至0.19 dB / cm,这与迄今报道的损耗最低的半导体波导相当。这些波导可用于制造用于导波设备的低损耗调制器。 (C)1996年美国眼镜学会[参考文献:25]

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