TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF INGAAS/INP MULTIPLE-QUANTUM-WELL STRUCTURES AT 1.3-MU-M WAVELENGTHS BY USE OF GERMANIUM SINGLE-PHOTON AVALANCHE PHOTODIODES

摘要

A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/InP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3-1.48 mu m was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 10(18)-10(15) cm(-3). The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes. (C) 1996 Optical Society of America [References: 25]