Annealing behavior of barriers in ion-implanted LiNbO_(3) and LiTaO_(3) planar waveguides

摘要

We formed planar waveguides in LiNbO_(3) and LiTaO_(3) crystals by megaelectron volt He-ion implantation, The dark modes of both waveguides are measured and their refractive-index profiles are described according to the parameterized index profile reconstruction method. The extraordinary indices of both ion-implanted waveguides exhibit quite different profiles. We compare the thermal stability of barriers in ion-implanted LiNbO_(3) and LiTaO_(3) waveguides by annealing at different temperatures. The results show that the barrier in a LiTaO_(3) planar waveguide has higher thermal stability than that in a LiNbO_(3) waveguide. The experiments also show that annealing at a temperature higher than 400 ℃ results in recrystallization of the barrier.