Infrared Spectra of Indium Hydrides in Solid Hydrogen and of Solid Indane

摘要

The inherent weakness of the In-H bond might be useful for the design of precursors for chemical vapor deposition (CVD) to make indium-containing semiconductor devices. Afew interesting indium hydride complexes have been prepared from InH_3NMe_3 and LiInH_4 but the primary indium hydride, indane (InH_3), has endured a controversial existence. Claims for the early preparation of solid indane by Wiberg et al. could not be reproduced. Mass spectroscopic investigation of the comparative stabilities of AlH_3, GaH_3, and InH_3 also casts doubt on the stability of (InH_3)_n. Reviews continue to state that indane has not yet materialized and theoretical calculations suggest that solid indane lacks roomtemperature stability. However, bridging In-H-In bonds formed on indiumrich InP semiconductor surfaces are stable at room temperature.