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Agostic Interactions in d~0 Metal Alkyl Complexes

机译:d〜0金属烷基络合物中的亲和性相互作用

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摘要

The phenomenon of agostic interactions is reviewed and the nature of the interaction is revisited. A historical perspective is followed by an overview of experimental techniques used to diagnose agostic behavior, and previous interpretations of agostic bonding are presented. A series of simple metal alkyl complexes is considered and a new model for the phenomenon in d0 systems is developed which sets them apart from agostic late-transitionmetal complexes. Factors such as the valence electron count and coordination number of the metal center are revealed to be unimportant in facilitating the interaction in most d0 systems. The charge density distribution in several transition-metal alkyl complexes is explored by experimental and theoretical techniques, including the powerful "Atoms in Molecules" approach. Local charge concentrations are shown to play an important role in the agostic interaction. Finally, we demonstrate for the first time a way to manipulate and control the magnitude and disposition of such local charge concentrations, and hence the strength of agostic interactions in d~0 metal alkyl complexes.
机译:回顾了交互作用的现象,并重新讨论了交互作用的性质。从历史的角度来看,后面是用于诊断疯狂行为的实验技术的概述,并介绍了先前对疯狂结合的解释。考虑了一系列简单的金属烷基络合物,并开发了d0系统中该现象的新模型,从而使它们与过时的后期过渡金属络合物区分开。在大多数d0系统中,诸如价电子数和金属中心的配位数等因素对于促进相互作用并不重要。通过实验和理论技术,包括强大的“分子中的原子”方法,探索了几种过渡金属烷基络合物中的电荷密度分布。已显示局部电荷浓度在异常相互作用中起重要作用。最后,我们首次证明了一种方法来控制和控制这种局部电荷浓度的大小和分布,从而控制和控制d〜0金属烷基络合物中的不良相互作用。

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