A Practical, Self-Catalytic, Atomic Layer Deposition of Silicon Dioxide

摘要

The outstanding chemical, electrical, and optical properties of silicon dioxide have made it ubiquitous in science and technology. The ability to create SiO2 nanostructures of well-defined geometry would broaden its range of applications even further, in particular in the chemical, electro-kinetic, and biomedical realms. Atomic layer deposition (ALD) is especially suited to nanostructuring, since its kinetics are controlled by surface chemistry rather than mass transport from the gas phase. However, reports on the ALD of silica are few and far between in the open literature to date. All published reactions suffer from some weakness: a corrosive by-product or catalyst, poor reproducibility, or impurities in the deposited film. Herein, we describe a practical ALD process for SiO2 that overcomes such limitations.