Ga_2O_3 and GaN Semiconductor Hollow Spheres

摘要

Both monoclinic Ga_2O_3 and Wurtzite-structured GaN are wide-band-gap semiconductors (energy gap,E_g=4.9 eV and 3.39 eV,respectively) that exhibit luminescence and conduction properties,thus,they have potential applications in optoelectronic devices,high-temperature stable gas sensors,and high-temperature/high-power electronic devi-ces.