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机译:接近MOS2的锂化限制,同时保持其层状晶体结构以改善锂储存
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
Inst Chem &
Engn Sci 1 Pesek Rd Singapore 627833 Singapore;
Inst Chem &
Engn Sci 1 Pesek Rd Singapore 627833 Singapore;
Nanyang Technol Univ Sch Mat Sci &
Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;
commercial MoS2; high rate; layered crystalline structure; lithiation depth; lithium ion batteries;
机译:接近MOS2的锂化限制,同时保持其层状晶体结构以改善锂储存
机译:MOSE2纳米片阵列,具有层状MOS2异质结构,用于优异的氢气进化和锂储存性能
机译:从碳布上的中间层膨胀MOS2纳米片衍生的无粘合剂电极,具有用于锂储存的3D多孔结构
机译:多层MoS2和石墨烯/ MoS2异质结构弹性特性的分子动力学模拟
机译:使用由MoS2,石墨烯和MoS2 /石墨烯复合材料的原子薄2D结构制成的电极分析电化学储能。
机译:MoS2 / g-C3N4复合材料作为阳极材料的快速合成具有改善的锂存储能力
机译:分层MOS2 / ZnS / C异质结构的界面工程作为高度改善的锂储存能力的阳极材料