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首页> 外文期刊>Angewandte Chemie >Approaching the Lithiation Limit of MoS2 While Maintaining Its Layered Crystalline Structure to Improve Lithium Storage
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Approaching the Lithiation Limit of MoS2 While Maintaining Its Layered Crystalline Structure to Improve Lithium Storage

机译:接近MOS2的锂化限制,同时保持其层状晶体结构以改善锂储存

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摘要

MoS2 holds great promise as high-rate electrode for lithium-ion batteries since its large interlayer can allow fast lithium diffusion in 3.0-1.0 V. However, the low theoretical capacity (167 mAh g(-1)) limits its wide application. Here, by fine tuning the lithiation depth of MoS2, we demonstrate that its parent layered structure can be preserved with expanded interlayers while cycling in 3.0-0.6 V. The deeper lithiation and maintained crystalline structure endows commercially micrometer-sized MoS2 with a capacity of 232 mAh g(-1) at 0.05 A g(-1) and circa 92 % capacity retention after 1000 cycles at 1.0 A g(-1). Moreover, the enlarged interlayers enable MoS2 to release a capacity of 165 mAh g(-1) at 5.0 A g(-1), which is double the capacity obtained under 3.0-1.0 V at the same rate. Our strategy of controlling the lithiation depth of MoS2 to avoid fracture ushers in new possibilities to enhance the lithium storage of layered transition-metal dichalcogenides.
机译:MOS2作为锂离子电池的高速电极,MOS2具有很大的希望,因为其大层间可以允许快速锂扩散在3.0-1.0 V中。然而,低理论容量(167mAhg(-1))限制其广泛的应用。 这里,通过微调MOS2的锂锂化深度,我们证明其母体分层结构可以在3.0-0.6 V中循环的同时保存均分层结构。更深的锂化和维持的晶体结构赋予商业上的微米尺寸的MOS2,其容量为232 MAH G(-1)在0.05Ag(-1)和1.0Ag(-1)下1000次循环后的92%容量保留。 此外,扩大的中间层使MOS2能够以5.0Ag(-1)释放165mAhg(-1)的容量,其为以相同的速率在3.0-1.0V下获得的加倍。 我们控制MOS2锂锂电层深度的策略,以避免骨折型在新的可能性中,以增强层状过渡金属二甲基甲基化物的锂储存。

著录项

  • 来源
    《Angewandte Chemie》 |2019年第11期|共6页
  • 作者单位

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

    Inst Chem &

    Engn Sci 1 Pesek Rd Singapore 627833 Singapore;

    Inst Chem &

    Engn Sci 1 Pesek Rd Singapore 627833 Singapore;

    Nanyang Technol Univ Sch Mat Sci &

    Engn Innovat Ctr Flexible Devices iFLEX 50 Nanyang Ave Singapore 639798 Singapore;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 应用化学;
  • 关键词

    commercial MoS2; high rate; layered crystalline structure; lithiation depth; lithium ion batteries;

    机译:商用MOS2;高速度;分层晶体结构;锂电层深度;锂离子电池;

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