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Exploring the Limits of Transition-Metal Fluorination at High Pressures

机译:在高压下探索过渡金属氟化的极限

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Fluorination is a proven method for challenging the limits of chemistry, both structurally and electronically. Here we explore computationally how pressures below 300 GPa affect the fluorination of several transition metals. A plethora of new structural phases are predicted along with the possibility for synthesizing four unobserved compounds: TcF7, CdF3, OsF8, and IrF8. The Ir and Os octaflourides are both predicted to be stable as quasi-molecular phases with an unusual cubic ligand coordination, and both compounds formally correspond to a high oxidation state of +8. Electronic-structure analysis reveals that otherwise unoccupied 6p levels are brought down in energy by the combined effects of pressure and a strong ligand field. The valence expansion of Os and Ir enables ligand-to-metal F 2p -> M 6p charge transfer that strengthens M-F bonds and decreases the overall bond polarity. The lower stability of IrF8, and the instability of PtF8 and several other compounds below 300 GPa, is explained by the occupation of M-F antibonding orbitals in octafluorides with a metal-valence-electron count exceeding 8.
机译:氟化是一种经过验证的方法,用于挑战结构和电子的化学限制。在这里,我们探讨了计算地低于300 GPA的压力会影响几种过渡金属的氟化。预测了一种新的结构各相,以及合成四种未接受的化合物的可能性:TCF7,CDF3,OSF8和IRF8。 IR和OS Octafles均认为稳定为具有不寻常的立方配体配位的准分子相的稳定性,并且两种化合物具有正式对应于+8的高氧化态。电子结构分析表明,通过压力和强配体场的综合影响,否则将不占用的6P水平降低。 OS和IR的价膨胀使配体 - 金属F 2P - > M 6P电荷转移能够增强M-F键并降低整体粘合极性。通过在八氟化物中占用超过8的八氟化物中的M-F抗抗体轨道,解释了IRF8的稳定性和PTF8的不稳定性和低于300GPa以下的其他化合物。

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